| PART |
Description |
Maker |
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| NEZ1011-3E NEZ1414-3E |
N-CHANNEL GaAs MESFET
|
NEC
|
| NEZ1011-8E |
X BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC, Corp.
|
| NEZ6472-8DD NEZ5964-4DD |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Microsemi, Corp.
|
| NEZ6472-15D NEZ4450-15DD |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Electronics Industry Public Company Limited
|
| MWT-3HP |
K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
MICROWAVE TECHNOLOGY INC
|
| K653 |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
|
PANASONIC CORP
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| NE6500379 NE6500379A NE6500379A-T1 |
3W L, S-BAND POWER GaAs MESFET
|
NEC
|
| NE-720 |
General Purpose GaAs MESFET
|
NEC
General Purpose GaAs MESFET
|
| NEZ1011-4E NEZ1414-4E |
4W X, Ku-BAND POWER GaAs MESFET
|
NEC
|
| ND4131-3D |
2 W, 4 V, C-band power GaAs MESFET
|
NEC
|
|
